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2SK2879-01
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Outline Drawings
TO-3P
FAP-2S Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol VDS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg Ratings 500 20 80 30 20 761 150 +150 -55 to +150 Unit V A A V A mJ W C C < *2 Tch=150C
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
*1 L=3.49mH, Vcc=50V
Electrical characteristics (Tc =25C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=500V VGS=0V VGS=30V VDS=0V ID=10A VGS=10V ID=10A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=20A VGS=10V RGS=10 L=3.49 mH Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C
Min.
500 2.5
Typ.
Max.
Units
V V A mA nA S pF
3.0 3.5 10 500 0.2 1.0 10 100 0.33 0.38 7.5 15.0 2200 3300 330 500 140 210 20 30 130 200 160 240 105 160 20 1.1 1.65 650 10.0
ns
A V ns C
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
Min.
Typ.
Max.
0.83 35.0
Units
C/W C/W
1
2SK2879-01
Characteristics
Power Dissipation PD=f(Tc)
FUJI POWER MOSFET
Safe operating area
ID=f(VDS):D=0.01,Tc=25C
10
2
160 140
DC 120 100 10
1
t=1s 10s 100s 1ms
PD [W]
80 60 40 20 0
ID [A]
10
0
10ms 100ms
10
-1
t D= T t T
0
50
100
150
10
-2
10
0
10
1
10
2
10
3
Tc [ C]
o
VDS [V]
Typical output characteristics
ID=f(VDS):80s Pulse test,Tch=25C
50
Typical transfer characteristic
ID=f(VGS):80s Pulse test,VDS=25V,Tch=25C
10
2
40
VGS=20V 10V 8V
6V
10
1
30
ID [A]
5.5V 20 5V
ID [A]
10
0
10
10 4.5V
-1
0 0 5 10 15 20 25 30 35
10
-2
0
1
2
3
4
5
6
7
8
9
10
VDS [V]
VGS [V]
Typical forward transconductance
gfs=f(ID):80s Pulse test,VDS=25V,Tch=25C
10
2
Typical drain-source on-state resistance
RDS(on)=f(ID):80s Pulse test, Tch=25C
3 VGS= 4.5V 5V 5.5V 6V
10
1
2
10
0
RDS(on) [ ]
1
gfs [s]
10
-1
8V 10V 20V
10
-2
0 10
-2
10
-1
10
0
10
1
10
2
0
5
10
15
20
25
30
35
40
45
50
ID [A]
ID [A]
2
2SK2879-01
FUJI POWER MOSFET
1.2
Drain-source on-state resistance RDS(on)=f(Tch):ID=10A,VGS=10V
6.0
Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS
1.0
5.0
0.8
4.0
RDS(on) [ ]
VGS(th) [V]
max. 0.6
max. 3.0 typ. min. 2.0
0.4
typ.
0.2
1.0
0.0 -50 0 50 100 150
o
0.0
-50
0
50
100
o
150
Tch [ C]
Tch [ C]
Typical gate charge characteristic
VGS=f(Qg):ID=20A,Tch=25C
500 450 Vcc=400V 400 350 Vcc=100V 250V 40 35 1n 30 400V 25 20 15 100V 100 50 0 10 5 0 300 10p 100p 50 45 10n
Typical capacitances C=f(VDS):VGS=0V,f=1MHz
Ciss
VDS [V]
300 250V 250 200 150
VGS [V]
C [F]
Coss
Crss
0
50
100
150
200
250
10
-2
10
-1
10
0
10
1
10
2
Qg [nC]
VDS [V]
Forward characteristic of reverse of diode
10
2
Avalanche energy derating
Eas=f(starting Tch):Vcc=50V,IAV=20A
800 700
IF=f(VSD):80s Pulse test,VGS=0V
10
1
600
Tch=25 C typ.
500 10
0
o
Eas [mJ]
IF [A]
400 300 200 100
10
-1
10
-2
0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0
50
o
100
150
VSD [V]
Starting Tch [ C]
3
2SK2879-01
FUJI POWER MOSFET
10
1
Transient thermal impedance Zthch=f(t) parameter:D=t/T
10
0
D=0.5
Zthch-c [K/W]
0.2 10
-1
0.1 0.05 0.02 0.01 0
t D= T t T
10
-2
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t [s]
4

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